2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics. 2N designed for generalpurpose switching and amplifier applications. DC Current Gain hFE = 4 Adc CollectorEmitter Saturation Voltage VCE(sat) = 2N Datasheet PDF Download – SILICON PNP TRANSISTOR, 2N data sheet.
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Views Read Edit View history. The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC catasheet is now less common and its use in higher frequency switch-mode applications never was very practical.
Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them.
Other manufacturers around this time also would specify similar values e. RCA by had changed their specification to give datashewt. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. KD are packaged in a TO-3 case style called T41 by Dataasheetit is a 20 amp80 voltwatt power transistor.
Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.
The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters. In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 dtaasheet as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N It was introduced in the early s by RCA dwtasheet a hometaxial power transistor process, transitioned datashwet an epitaxial base in the mids.
Wikimedia Commons has media related to 2N Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range. The robot builder’s bonanza 2nd ed.
2N 데이터시트(PDF) – Unisonic Technologies
An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N Retrieved 7 November The KD have higher power and higher current than 2N Modern 2N datasheets often, but not always, specify f T of 2. The maximum darasheet voltage for the 2N, like other transistors, depends on the resistance path the datasgeet circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.
It often has a transition frequency of around 3. Variants with higher voltage ratings e.
The art of electronics 2nd ed. Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.
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PNP SILICON TRANSISTOR
From Wikipedia, the free encyclopedia. It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.
The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists. Also the higher frequency response has improved performance when used in audio amplifiers. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.
With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. With an “infinite” heatsink, that is: The frequency at which gain begins to drop off may be much lower, see below. This page was last edited on 22 Novemberat Retrieved 31 October The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.
KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications.