2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.

Author: Dihn Shaktisar
Country: Georgia
Language: English (Spanish)
Genre: Music
Published (Last): 20 December 2006
Pages: 386
PDF File Size: 5.25 Mb
ePub File Size: 18.4 Mb
ISBN: 759-5-85737-386-1
Downloads: 45011
Price: Free* [*Free Regsitration Required]
Uploader: Dule

In other projects Wikimedia Commons.

TRANSISTOR+2N datasheet & applicatoin notes – Datasheet Archive

Modern 2N datasheets often, dataheet not always, specify f T of 2. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or 2n303 power handling may result, especially with cases or heatsinks that are not perfectly flat.

Graf; William Sheets Also the higher frequency response has improved performance when used in audio amplifiers. It often has a transition frequency of around 3. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in It has a transition frequency of 2. The art of electronics 2nd ed. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.

RCA by had changed their specification to give 2.

Retrieved from ” https: Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected. This datzsheet was last edited on 22 Novemberat Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.


With changes to 23035 manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.

It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. Retrieved 7 November It was produced exclusively by the Czechoslovakian electronics company Tesla.

2N3035 Datasheet, Equivalent, Cross Reference Search

KD is a higher power equivalent used in Eastern Bloc countries, dtasheet is intended for general purpose applications. Views Read Edit View history. The frequency at which gain begins to drop off may be much lower, see below.

The robot builder’s bonanza 2nd ed. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings. Commons category link from Wikidata. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. From Wikipedia, the free encyclopedia.

2N Datasheet, PDF – Alldatasheet

The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.

Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them.

By using this site, you agree to the Terms of Use and Privacy Policy. Other manufacturers around this time also would specify similar values e. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.


Variants with higher voltage ratings e. Wikimedia Commons has media related to 2N KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor.

The 2N is a silicon NPN power transistor intended for general purpose applications. With an “infinite” dstasheet, that is: An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N The KD have higher power and higher current than 2N The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is ratasheet less common and its use in datzsheet frequency switch-mode applications never was very practical.

The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard. In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower daatsheet ratings than the 2N Retrieved 31 October The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

Build your own low-power transmitters: Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and catasheet supplies.

Author: admin