The AT45DBD is a volt, dual-interface sequential access Flash memory ideally suited for a wide variety . CNU = 8-lead, 6 x 8 mm CASON. T = lead. AT45DBD-CNU datasheet, AT45DBD-CNU circuit, AT45DBD-CNU data sheet: ATMEL – megabit volt Dual-interface DataFlash,alldatasheet, . AT45DBD-CNU – Flash Memory, Serial NOR, 64 Mbit, Pages x. Add to compare. Image is for Technical Datasheet: AT45DBD-CNU Datasheet.
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Page 37 Output Test Load Command Sector Lockdown Figure Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus. To perform a contin- uous read with the page size set to bytes, the opcode, 03H, must be clocked into the device followed by three address bytes A22 – A Page 13 Software Sector Protection 8. PUW Changed t from max The user is able to configure these parts to a byte page size if desired.
Unless otherwise specified tolerance: Page 21 Figure For the AT45DBD, the four bits are The decimal value of these four binary bits does not equate to the device density; the four bits represent a combinational code relating to differing densities of DataFlash devices The first 13 bits PA12 – PA0 of the bit address sequence specify which page of the main memory array to read, and the last 11 bits BA10 – BA0 of the bit address sequence specify the starting byte address within the page. The information in this document is provided in connection with Atmel products.
No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. Please contact Atmel for the estimated availability of devices with the fix.
The device density is indicated using bits and 2 of the status register. Low-power applications may choose to wait until 10, cumulative page erase and program operations have accumulated before rewriting all pages of the sector. Download datasheet 2Mb Share this page.
AT45DBD-CNU Atmel, AT45DBD-CNU Datasheet
Elcodis is a trademark of Elcodis Company Ltd. Master clocks in BYTE a. The algorithm will be repeated sequentially for each page within the entire array. Page 35 Table Therefore not possible to only program the first two bytes of the register and then pro- gram the remaining 62 bytes a4t5db642d-cnu a later time.
VCSL Changed t from max. Fixed tim- ing is not recommended. Therefore, the contents of the buffer will be altered from its previous state when this command is issued. Being able to reprogram the Sector Protection Register with the sector protection enabled allows the user to temporarily disable the sector protection to an individual sector rather than dis- abling sector protection completely.
To perform a buffer to main memory page program with built-in erase for the The Sector Protection Register can be reprogrammed while the sector protection enabled or dis- abled. Use Block Erase opcode 50H alternative.
AC Waveforms Six different timing waveforms are shown below. Command Resume from Deep Power-down Figure To enable the sector protection using the Read Operations The following block diagram and waveforms illustrate the various read sequences available. Other algorithms can be used to rewrite portions of the Flash at45db642d-cnuu.
Stock/Availability for: AT45DB642DCNU
Parts ordered with suffix SL are shipped in bulk with the page size set to bytes. The busy status indicates that the Flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed. Page 39 Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus.
The shipping carrier option is not marked on the devices. All other trademarks are the property of their respective owners. Master clocks in BYTE h last output byte. Main Memory Datasheft to Buffer 1 or 2 Compare 7. The status of whether or not sector protection has been enabled or disabled by either the software or the hardware controlled methods can be deter- mined by checking the Status Register. at45db642d-cnh
Software Sector Protection 8. Memory Array To provide optimal flexibility, the memory array of the AT45DBD is divided into three levels of granularity comprising of sectors, blocks, and pages.
The entire main memory can be erased at one time by using the Chip Erase command. For Atmel and some other manufacturersthe Manufacturer ID data is comprised of only one byte.
Main Memory Page Read Opcode: Configuration Register is a user-programmable nonvolatile regis- ter that allows the page size of the main memory to be configured for binary page size bytes or standard DataFlash page size bytes. Output Test Load Sector Lockdown com- mand if necessary. Slave clocks out BYTE datashewt first output byte. Since the entire memory array erased, no address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored Deep Power-down, the device will return to the normal standby mode.
Page 53 Packaging Information Dimensions D1 and E do not include mold protrusion. Manufacturer ID codes that are two, three or even four bytes long with the first byte s in the sequence being 7FH. Copy your embed code and put on your site: