BU2520AX DATASHEET PDF

isc website: 1 isc Silicon NPN Power Transistor. BUAX. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAX BUAX; Silicon Diffused Power Transistor;; Package: SOT ( TOP-3D). Details, datasheet, quote on part number: BUAX. BUAX datasheet, BUAX circuit, BUAX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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BU2520AX Silicon Diffused Power Transistor

Switching times waveforms 32 kHz. Typical base-emitter saturation voltage.

The information presented in this document does not form part of any quotation datashwet contract, it is believed to be accurate and reliable and may be changed without notice.

Test circuit for VCEOsust.

BU2520AX – Silicon Diffused Power Transistor

No liability will be accepted by the publisher datasheeg any consequence of its use. Switching times waveforms 16 kHz.

Refer to mounting instructions for F-pack envelopes. September 8 Rev 2. Switching times test circuit.

BUAX_PDF Datasheet Download IC-ON-LINE

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Typical collector storage and fall time.

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Forward bias safe operating area. Collector to emitter voltage Dataasheet to emitter voltage open base Collector current DC Collector current peak value Base current DC Base current peak value Reverse base current Reverse base current peak value1 Total power dissipation Storage temperature Junction temperature.

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. How long will receive a response.

Click here to Download. New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection bu2520as of large screen colour television receivers. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. September 2 Rev 2. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Application information Where application information is given, it is advisory and does not form part of the specification. New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

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Stress above one or more of the limiting values may cause permanent damage to the device.

BUAX datasheet(1/8 Pages) PHILIPS | Silicon Diffused Power Transistor

SOT; The seating plane is electrically isolated from all terminals. Exposure to limiting values for extended periods may affect device reliability. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Typical collector-emitter saturation voltage.

Typical DC current gain. Product specification This data sheet contains final product specifications. Oscilloscope display for VCEOsust. Mounted with heatsink compound.

September 7 Rev 2. September 1 Rev 2. UNIT – – 1. Cfb -VBB t Fig. September 3 Rev 2. Want to post a buying lead? Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

September 6 Rev 2. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

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