H8NA60FI DATASHEET PDF

H8NA60FI Datasheet PDF Download – STH8NA60FI, H8NA60FI data sheet. H8NA60FI NTE Equvilent NTE POWER MOSFET N-CHANNEL V ID- 14A TO-3P CASE HIGH SPEED SWITCH. NTE Data Sheet Data Sheet. NTE. H8NA60FI Datasheet: N – CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR, H8NA60FI PDF Download STMicroelectronics, H8NA60FI.

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H8NA60FI Datasheet

G ate-source Volt age. Unclamped Inductive Load Test Circuit.

Static Drain-source On Resistance. On State Drain Current. Covers your purchase price and original shipping. With 11 years of professional experience in distribution in this area, we own a big and professional sale team with members from all over the world. Normalized Gate Threshold Voltage vs Temperature. We boast our competitive prices and short lead time. Gat e Threshold Voltage V.

Gat e-body Leakage Current V. Switching Safe Operating Area. Drain Current continuous at T.

H8NA60FI (STMicroelectronics) – N – Channel Enhancement Mode Fast Power Mos Transistor

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. I nsulation W ithstand Voltage DC. Professional international purchasing capacity 3. We can also ship via registered air mail, H8na60ci will take days to airrive at your office.

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Packaging should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box h8na60i plastic bag.

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Shipping can be combined if larger quantities are purchased. Yes, Our product technical engineer will help you on the H8NA60FI pinout information, application notes, replacement, datasheet in h8ba60fi, manual, schematic, equivalent, cross reference.

Thermal Impedance for TO Return it and get a full refund, or B: This publication supersedes and replaces all information previously supplied.

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Paypal accepted, order online today! We sincerely look forward to establishing business relationship with you in the future. C unless otherwise specified. Our company has our own inventory in large quantity that can meet all of your requirements and needs. Source-drain Diode Forward Characteristics. Specialize in obsolete transistors and hard-to-find parts at cheap price. We sell High-power transistors, darlington power transistors, high-voltage transistors, high-frequency, high-gain transistors, switching transistors, RF, small-signal transistors, SCR, triac, mosfet, three-terminal regulator, IC, thick-film hybrid integrated circuits and so on.

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Specification mentioned in this publication are subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.

H8NA60FI Datasheet PDF – STMicroelectronics

In Stock Can ship immediately Price: Drain- gate Voltage R. Include your shipping address and preferred shipping method. However, STMicroelectronics assumes no datasheeg for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.

We have won the affirmation of international markets for h8nna60fi prices, fast delivery and guaranteed quantity. Gate Charge test Circuit. Single Pulse Avalanche Energy starting T. Pulse width limited by safe operating area.

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