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The chip specifies the “typical” LO output current as 1A, not an absolute maximum. Without a gate resistor the only thing limiting the current is the gate driver’s output resistance, which is supposedly low, it would not be a good driver otherwise.
IRLML datasheet & applicatoin notes – Datasheet Archive
Owing to the fact that this gate driver features adaptive dead-time and thus monitors the gate of irkml2803 MOSFET to determine when it has fully turned off, a gate resistor prevents proper sensing of the actual gate. Sign up using Facebook. It won’t be able to deliver 1A or more continuously, however – it can only do that for short pulses.
Mahendra Gunawardena 1, 9 It will survive a pulse of 7A at 20V just fine as long as it’s only 10 microseconds long. Post as a guest Name. On page 4, bottom right, there’s a graph showing the maximum safe operating area SOA of the device.
30V Single N-Channel HEXFET Power MOSFET In A Micro 3 Package
Email Required, but never shown. The current might be internally limited. Unimportant 1 6. Sign up or log in Sign up using Google.
IRLML (IRF) PDF技术资料下载 IRLML 供应信息 IC Datasheet 数据表 (2/9 页)
MOSFETs like the ones in the MIC’s output stage can handle large current pulses for a short time by simply absorbing the heat generated by the pulse in their thermal mass.
This current is limited by its internal output resistance since there doesn’t seem to be a limiting circuit according to the datasheet’s diagram of the output stage. The FET can’t get rid of that heat but will absorb it in its thermal mass instead, heating up a little. That’s W dissipated in a SOT device. If the pulse is short enough, the FET will not heat up much and therefore survive just fine.
My thinking is this should lead to current peaks that easily exceed the driver’s 1A maximum peak current and damage the chip, but the evaluation board demonstrates that this is not the case, what am I missing?